Samsung mass producing 128Gb 3-bit MLC NAND flash
Jessie Shen, DIGITIMES, Taipei [Monday 15 April 2013]
Samsung Electronics has begun mass producing a 128Gb, 3-bit multi-level-cell (MLC) NAND memory chip using 10nm-class process technology, according to the company. The new Samsung 128Gb chip boasts performance level of 400 megabits-per-second (Mbps) data transfer rate based on the toggle DDR 2.0 interface. It is targeted at future high-density memory solutions such as embedded NAND storage and solid state drives (SSD).
Samsung indicated that the company will expand its supply of 128GB memory cards, and also develop SSDs with more than 500GB of capacity.
"The new chip is a critical product in the evolution of NAND flash, one whose timely production will enable us to increase our competitiveness in the high density memory storage market," Young-Hyun Jun, memory sales & marketing executive VP of Samsung's device solutions division, said in a statement.
In November 2012, Samsung introduced 64Gb NAND flash memory built using 10nm-class process technology. The device already went into production.
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